Cite
HARVARD Citation
Jang, H. et al. (n.d.). Formation of a Ge-rich Si1−xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation. Semiconductor science and technology. p. . [Online].
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Jang, H. et al. (n.d.). Formation of a Ge-rich Si1−xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation. Semiconductor science and technology. p. . [Online].