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APA Citation
Isakov, I., Faber, H., Mottram, A. D., Das, S., Grell, M., Regoutz, A., Kilmurray, R., McLachlan, M. A., Payne, D. J., & Anthopoulos, T. D. (2020). quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In2O3 Transistors. Advanced Electronic Materials, 6, n/a. http://access.bl.uk/ark:/81055/vdc_100114891820.0x000005