Cite
HARVARD Citation
Isakov, I. et al. (2020). Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In2O3 Transistors. Advanced Electronic Materials. p. n/a. [Online].
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Isakov, I. et al. (2020). Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In2O3 Transistors. Advanced Electronic Materials. p. n/a. [Online].