Investigation of multiple short-circuits characteristics and reliability in SiC power devices used for a start-up method of power converters. (November 2020)

• Record Type: Journal Article
• Authors: Mannen, Tomoyuki; Isobe, Takanori; Wada, Keiji
• Is Part Of: Microelectronics and reliability. Volume 114(2020)
• Publication Date: 2020-11
• Subjects: Non-destructive evaluation -- Reliability test -- Short-circuit -- SiC-MOSFET; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113775
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper investigates characteristics and reliability of SiC power devices used for a start-up method based on multiple short-circuits. A planar-gate and trench-gate SiC-MOSFETs and SiC-JFET employed in a practical power converter are tested under the start-up method using multiple short-circuits more than 10, 000 cycles. The experimental results exhibit only the planar-gate SiC-MOSFET can survive the 10, 000 cycle short-circuit tests with slight degradation under a testing condition. As a result, this paper reveals the planar-gate SiC-MOSFET is suitable for the start-up method due to its characteristic.