Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test. (November 2020)

• Record Type: Journal Article
• Authors: Zhao, D.; Letz, S.; Yu, Z.; Schletz, A.; März, M.
• Is Part Of: Microelectronics and reliability. Volume 114(2020)
• Publication Date: 2020-11
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113785
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The thin film metallization, as a key structure of the semiconductor devices, realizes the bond-ability of the chips on circuit carriers and directly influences the electrical and mechanical reliability of the interconnection. In a previous study, a recently developed method, cross-sectional nanoindentations (CSN), has been utilized to characterize the adhesion strength degradation of the thin film metallization and its feasibility has been proved. In this paper, based on the now extended CSN test results from the previous study, a combined experimental and numerical approach with a cohesive zone model (CZM) is developed in order to evaluate the adhesion strength degradation of the thin film metallization quantitatively by means of the critical strain energy release rate Gc and therefore to obtain a measure with physical meaning and extrapolation ability. Highlights: Degrease of adhesion strength of the thin film metallization on a semiconductor substrate subjected to TCT Quantitative characterization of the adhesion strength by a combined experimental and numerical approach A method for investigating the adhesion strength degradation of the thin film