Cite
MLA Citation
Junjun Zhang et al.. “Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature.” Microelectronics and reliability, vol. 114, 2020, p. . http://access.bl.uk/ark:/81055/vdc_100114885466.0x00005f