Cite
HARVARD Citation
Zhang, J. et al. (2020). Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature. Microelectronics and reliability. p. . [Online].
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Zhang, J. et al. (2020). Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature. Microelectronics and reliability. p. . [Online].