Impact of stray-inductance imbalance on short-circuit capability of multi-chip SiC power modules. (November 2020)

• Record Type: Journal Article
• Authors: Chou, K.; Isobe, T.; Mannen, T.
• Is Part Of: Microelectronics and reliability. Volume 114(2020)
• Publication Date: 2020-11
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113796
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper discusses whether short-circuit capability of multi-chip SiC-MOSFET power modules is affected by stray-inductance imbalance between the chips or not. Experimental power modules equipped with commercial 1.2-kV, 19-A SiC-MOSFET chips are designed and fabricated in three different internal layouts, and then short-circuit capability of the power modules is measured. The experimental results show that the significant effect of stray-inductance imbalance can be seen only for 20 ns after the short-circuit event start. As a result, this paper reveals that multi-chip power module design doesn't need to pay attention to imbalance of stray inductance from the perspective of the short-circuit robustness.