Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring. (November 2020)

• Record Type: Journal Article
• Authors: Hayashi, Shin-Ichiro; Wada, Keiji
• Is Part Of: Microelectronics and reliability. Volume 114(2020)
• Publication Date: 2020-11
• Subjects: SiC MOSFET -- Gate oxide -- HTGB -- Condition monitoring -- Reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113777
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper, a method for the condition monitoring of the gate-oxide degradation in silicon carbide (SiC) metal-oxide-semiconductor–field-effect transistors (MOSFETs) is presented. To identify the gate-oxide degradation in SiC MOSFETs, a high-temperature gate bias (HTGB) test, which is an accelerated aging test, is usually performed. This paper proposes an advanced HTGB test for power devices. The test is suitable for developing a condition monitoring system for power devices because the test can accelerate the device aging under switching conditions. Electrical parameter changes in the SiC MOSFETs are demonstrated in the test results. Furthermore, a condition monitoring technique using the input capacitance C iss change of the SiC MOSFETs is proposed.