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APA Citation
Borghese, A., Riccio, M., Longobardi, G., Maresca, L., Breglio, G., & Irace, A. (2020). gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs. Microelectronics and reliability, 114, . http://access.bl.uk/ark:/81055/vdc_100114884824.0x000056