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HARVARD Citation
Borghese, A. et al. (2020). Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs. Microelectronics and reliability. p. . [Online].
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Borghese, A. et al. (2020). Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs. Microelectronics and reliability. p. . [Online].