Cite
MLA Citation
S Bin Anooz et al.. “Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE.” Journal of physics, vol. 54, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100114464717.0x000060