Cite
HARVARD Citation
Bin Anooz, S. et al. (2021). Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE. Journal of physics. p. . [Online].
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Bin Anooz, S. et al. (2021). Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE. Journal of physics. p. . [Online].