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APA Citation
Sun, Z., Huang, H., Wang, R., Liu, Y., Sun, N., Li, F., Tao, P., Ren, Y., Song, S., Wang, H., Li, S., Cheng, W., Gao, J., & Liang, H. (2021). effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors. Journal of physics, 54, . http://access.bl.uk/ark:/81055/vdc_100114463147.0x00005b