Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies. (April 2020)

• Record Type: Journal Article
• Authors: Habeenzu, Brilliant; Meyer, Walter; Stander, Tinus
• Is Part Of: Microelectronics and reliability. Volume 107(2020)
• Publication Date: 2020-04
• Subjects: CMOS technology -- Integrated circuit modelling -- Parameter extraction -- Total ionizing dose; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113598
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The effect of electron radiation on the forward-active small-signal model parameters for 0.35 μm CMOS devices is reported. Four devices with different gate widths were exposed to electron radiation using a Strontium 90 (Sr 90) radiation source at dose rates of 200 kRad (Si)/hr up to a total radiation dose of 2.7 MRad. S-parameters were measured, and small-signal models extracted, both pre-irradiation and at regular dose intervals. Relationships between small-signal model parameters and total radiation dose d were derived and used to calculate small-signal parameters. The major model variations due to total ionizing dose exposure were increases in the gate resistance ( R g ), gate drain capacitance ( C gd ) and gate source capacitance ( C gs ), with a reduction in transconductances ( g m and g ds ). This results in S11 and S22 becoming more resistive as d is increased, with a decrease in the unilateral gain, f T and f max . The application of the data in predictive modelling of radiation damage is demonstrated.