Copper film deposition using a helium dielectric barrier discharge jet. Issue 11 (15th June 2020)

• Record Type: Journal Article
• Authors: Tsai, Tsung‐Chan; Mcintyre, Katelyn; Burnette, Matthew; Staack, David
• Is Part Of: Plasma processes and polymers. Volume 17:Issue 11(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-06-15
• Subjects: atmospheric‐pressure nonthermal plasma jet -- copper(II) acetylacetonate -- dielectric barrier discharge -- plasma‐enhanced chemical vapor deposition -- thin films; Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201900251
• Languages: English
• ISSNs: 1612-8850

Abstract

Abstract: This study demonstrates that plasma‐enhanced chemical vapor deposition of copper films can be achieved in ambient air and at low temperature. A helium dielectric barrier discharge jet with a small mixture of hydrogen and copper(II) acetylacetonate vapor is utilized as the nonthermal plasma source to deposit conductive copper films with low electrical resistivity (<1 × 10 −7 Ω·m). The deposited film appears to have three distinct regions (reddish brown, dark blue, and yellowish) from center to edge. Copper nanograins (~50 nm) are observed in both the reddish‐brown and the dark‐blue regions, whereas the yellowish region exhibits a continuous structure containing copper oxide. The copper films are further deposited on various temperature‐sensitive substrates, including plastic, cardboard, agar, and pork skin. Abstract : Plasma‐enhanced chemical vapor deposition of copper films is achieved in ambient air and at low temperature using a helium dielectric barrier discharge jet. The deposited copper films are characterized. Film deposition is also achievable on temperature‐sensitive substrates, such as plastic, cardboard, agar, and pork skin.