Electrical and photocurrent properties of a polycrystalline Sn-doped β-Ga2O3 thin film. (January 2021)

• Record Type: Journal Article
• Authors: Yoon, Youngbin; Kim, Sunjae; Lee, In Gyu; Cho, Byung Jin; Hwang, Wan Sik
• Is Part Of: Materials science in semiconductor processing. Volume 121(2021)
• Publication Date: 2021-01
• Subjects: Ga2O3 -- Thin film -- Spin-on-glass -- Metal-oxide semiconductor field-effect transistors -- Solar-blind photodetectors -- Sputtering; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.105430
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Polycrystalline n-type β-Ga2 O3 thin films with a thickness of 100 nm are demonstrated via the sputtering process followed by the spin-on-glass Sn-doping technique. The thin films are used as an active layer for power electronics and ultraviolet optoelectronics. In the present study, they are implemented in back-gated metal-oxide-semiconductor field-effect transistors with a 300-nm thick SiO2 gate dielectric. The fabricated device shows typical power electronic properties with high breakdown voltages (as high as 216 V). The device also shows a clear photoresponse to the 254-nm light illuminations, indicating that the polycrystalline β-Ga2 O3 thin film is also suitable for solar-blind photodetectors.