Silicon separation and purification process from hypereutectic aluminum-silicon for organosilicon use. (January 2021)

• Record Type: Journal Article
• Authors: He, Yunfei; Yang, Xi; Duan, Lianfei; Li, Shaoyuan; Chen, Zhengjie; Ma, Wenhui; Lv, Guoqiang; Xing, Aimin
• Is Part Of: Materials science in semiconductor processing. Volume 121(2021)
• Publication Date: 2021-01
• Subjects: Separation process -- High separation efficiency -- Hypereutectic aluminum-silicon melt -- Alternating electromagnetic field -- Directional solidification; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.105333
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Industrial silicon is always used for the manufacture of organosilicon. This study evaluated the segregation properties of hypereutectic aluminum–silicon melts and revealed the silicon separation process from hypereutectic aluminum-silicon melts dealt with alternating electromagnetic directional solidification (AEM-DS). During the electromagnetic refining, the electromagnetic force can not penetrate Al–Si melts deeply and melts flow was generated by the outer thin surface, when the frequencies are 3, 30 and 50 kHz, the corresponding skin depths are 5.930, 1.876 and 1.027 mm, which show sharp attenuations. Moreover, the numerical simulation was used to simulate the electromagnetic field distribution. The experimental phenomenon can accord well with the simulation and calculation results. Moreover, this study reveal the middle process of hypereutectic Al–Si melt dealt with AEM-DS. The better separation effect will be helpful to eliminate Si, Al and acid waste in the following acid leaching. Highlights: An innovative process of silicon separation from Al–Si alloy under AEM-DS was carried out. The properties of hypereutectic Al–Si melts and electromagnetic field distribution were analyzed. The electromagnetic field distribution was calculated, simulated and verified by experiments.