Effect of Cu content in CIGSe absorber on MoSe2 formation during post-selenization process. (January 2021)

• Record Type: Journal Article
• Authors: Bi, Jinlian; Ao, Jianping; Yao, Liyong; Zhang, Yi; Sun, Guozhong; Liu, Wei; Liu, Fangfang; Li, Wei
• Is Part Of: Materials science in semiconductor processing. Volume 121(2021)
• Publication Date: 2021-01
• Subjects: MoSe2 layer -- Ga diffusion -- CIGSe thin film -- Solar cells; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.105275
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: MoSe2 layers, which would help to form ohmic contact and improve the adhesion, were formed at the Mo/CIGSe interface during the CIGSe preparing process. However, a thick MoSe2 layer could introduce carrier recombination center, high contact resistance, and might result in poor adhesion of CIGSe films, which played a deleterious role in the efficiency of the devices. In this study, the effect of Cu content and Ga diffusion on the formation of MoSe2 layer was investigated. The thick MoSe2 layer tended to form with Cu/(In + Ga) < 0.7, and MoSe2 was difficult to form at the Mo/CIGSe interface when Cu/(In + Ga) > 0.9. Finally, CIGSe thin film with large grains and a thin MoSe2 layer was obtained with the value of Cu/(In + Ga) between 0.8 and 0.9, and an 11.04% efficiency CIGSe solar cell was fabricated with the open circuit voltage of 505 mV. Highlights: Thick MoSe2 layer tended to form with Cu/(In + Ga) ratio lower than 0.7. No MoSe2 was formed with Cu/(In + Ga) ratio greater than 0.9. Large-grained CIGSe film with thin MoSe2 layer was obtained with Cu/(In + Ga) ratio in the range of 0.8 and 0.9. 11.04% CIGSe solar cell was fabricated.