Novel failure traces beyond the barrier on the floating device. (November 2020)

• Record Type: Journal Article
• Authors: Lee, Gwang Wook; Shim, Sunnu; Cho, Wookhyun; Kim, Wonse; Lee, Kisoo; Kim, Jaehyun; Cho, Seongjun; Won, Seokjun; Koo, Bonyoung
• Is Part Of: Microelectronics and reliability. Volume 114(2020)
• Publication Date: 2020-11
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113874
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Failure Analysis (FA) on Fully Depleted Silicon on Insulator (FDSOI) device is challenging due to its unique structure with buried oxide layer. Typical failure analyses for the bulk device are not viable to isolate the fault location as the first step for the defect finding any more in such a FDSOI environment. Based on the in-depth study on structural limitation of the FDSOI device, this paper firstly reports novel approaches for the physical and electrical FA methodologies with the success stories for yield learning. Furthermore, we demonstrate the improvements of FA methods compared to the conventional ones and how new ideas are applied to the analysis procedure including the minute soft defect FA. Highlights: Top bottom fusion FA to cover FEOL, BEOL, and tiny soft defect FC PVC to overcome the limit of voltage contrast in SOI and applicable to the floating device FA Advanced I-V Analysis, accessible soft defect FA method SCM based fault isolation for one time FA over many transistors and soft defect detection