Cite
HARVARD Citation
Yang, J. et al. (2020). Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves. Physical chemistry chemical physics. 22 (44), pp. 25730-25739. [Online].
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Yang, J. et al. (2020). Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves. Physical chemistry chemical physics. 22 (44), pp. 25730-25739. [Online].