Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves. Issue 44 (4th November 2020)

• Record Type: Journal Article
• Authors: Yang, Jie; Quhe, Ruge; Liu, Shiqi; Peng, Yuxuan; Sun, Xiaotian; Zha, Liang; Wu, Baochun; Shi, Bowen; Yang, Chen; Shi, Junjie; Tian, Guang; Wang, Changsheng; Lu, Jing; Yang, Jinbo
• Is Part Of: Physical chemistry chemical physics. Volume 22:Issue 44(2020)
• Page Start: 25730
• Page End: 25739
• Publication Date: 2020-11-04
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d0cp03761c
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Here we design a monolayer Fe3 GeTe2 spin-valve device by attaching two ends to ferromagnetic electrodes. A high magnetoresistance of ~ 390% is obtained and significantly increased to 450 ~ 510% after the gates are introduced. Abstract : Ferromagnetic order in two-dimensional (2D) van der Waals crystals has been attracting much attention recently. Remarkably, room temperature metallic ferromagnetism is realized in 2D Fe3 GeTe2 . Here we design a monolayer (ML) Fe3 GeTe2 spin-valve device by attaching two ends to ferromagnetic electrodes and applying a magnetic field to these ferromagnetic electrodes. We investigate the spin-involved transport characteristics of such a spin valve by using ab initio quantum transport simulation. A high magnetoresistance of ∼390% is obtained and significantly increased to 450–510% after the gates are introduced. The magnetoresistance of the ML Fe3 GeTe2 spin valve is insensitive to the strain modulation. Our study provides a potential option for magnetic storage applications and will motivate further studies in spintronics based on this class of materials.