Influence of contact resistance on the electrical characteristics of organic static induction transistors. (27th August 2019)

• Record Type: Journal Article
• Authors: Zhang, Yong; Yang, Shengyi; Jiang, Yurong; Zou, Bingsuo
• Is Part Of: Semiconductor science and technology. Volume 34:Number 9(2019)
• Publication Date: 2019-08-27
• Subjects: contact resistance -- organic static induction transistor (OSIT) -- pentacene -- negative drain–source voltage -- device configuration; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab3818
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The influencing factors on the current–voltage ( I – V ) characteristics of organic static induction transistors (OSITs) are complicated and usually the underneath physical mechanism depends on many parameters. In this paper, firstly we come up with a typical OSIT model and summarize its theoretical equations to the I – V curves of pentacene-based OSIT ITO(Source)/Pentacene/ Al(Gate)/Pentacene/Au(Drain) under both negative drain–source voltage and gate voltage ( V G ), and the influence of contact resistance on OSITs is investigated. Our simulation showed that the injection barriers, the depletion layer and the gate controlling reduce when OSIT approaches the space-charge-limited current mode by decreasing the negative V G, which confirms our previous supposal that the contact resistance at the interfaces of Al inter-gate electrode and at the two injection electrodes reduces after keeping the device for a long-enough time. Also, our simulating equations can be applied to other organic based OSITs under positive both V DS and V G .