Effect of substrate nano-SiO2 hybridization on edge stress distribution of two-dimensional horseshoe-shaped interconnect under thermal load. (15th October 2020)

• Record Type: Journal Article
• Authors: Gu, Wanghang; Chen, Cheng; Chen, Rui; Zhao, Hanwei; Liu, Bing
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 11(2020)
• Publication Date: 2020-10-15
• Subjects: flexible electronics -- digital image correlation -- film-substrate structure -- thermal load -- stress distribution -- ; particle hybridization; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abbb21
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The stress distribution of the two-dimensional (2D) horseshoe-shaped interconnect in the flexible electronic composite film under thermal load is reported, and the effect of substrate nano-SiO2 hybridization on this stress distribution is studied. Experimental results show that when the temperature rises, stress concentration gradually occurs at the edge of the 2D horseshoe-shaped interconnect. After nano-SiO2 hybridizing, the stress concentration at the edge is significantly reduced, and the strain stability near the edge is improved. When the substrate SiO2 content is greater than 8 wt%, the negative effect of thermal stress on the composite film is reduced to a very low level.