Cite
HARVARD Citation
Chiang, T. (2020). Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate. Microelectronics journal. p. . [Online].
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Chiang, T. (2020). Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate. Microelectronics journal. p. . [Online].