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HARVARD Citation
Yamaguchi, S. et al. (2018). Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET. Microelectronics and reliability. pp. 157-161. [Online].
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Yamaguchi, S. et al. (2018). Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET. Microelectronics and reliability. pp. 157-161. [Online].