Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating. (April 2018)

• Record Type: Journal Article
• Authors: Nguyen, Chuong V.
• Is Part Of: Superlattices and microstructures. Volume 116(2018)
• Page Start: 79
• Page End: 87
• Publication Date: 2018-04
• Subjects: Graphene -- Molybdenum disulphide -- Electric field -- Schottky contact -- Heterostructure; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.02.012
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2 ) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n -type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n -type Schottky contact to the p -type one was observed, whereas the system keeps an n -type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure. Highlights: Electronic properties of G/MoS2 heterostructure are preserved due to the weak van der Waals interaction. N-type Schottky contact is formed in G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Electric field can control not only the Schottky barrier height but also the Schottky contacts. A transformation from n-type Schottky contact to the p-type one was observed under an electric field of 4 V/nm. Our results may provide helpful information to design, and fabricate graphene-based 2D heterostructures.