Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes. Issue 9 (August 2015)

• Record Type: Journal Article
• Authors: Del Vecchio, P.; Curutchet, A.; Deshayes, Y.; Bettiati, M.; Laruelle, F.; Labat, N.; Béchou, L.
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 9/10(2015)
• Page Start: 1741
• Page End: 1745
• Publication Date: 2015-08
• Subjects: Laser diodes -- Reliability -- Low-frequency noise -- Microplasma -- Semiconductor; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.06.041
• Languages: English
• ISSNs: 0026-2714

Abstract

Highlights: We observe atypical laser diode (LD) signatures in reverse I-V measurement identified as microplasma discharges. Correlation between reverse I-V signatures and LFN measurements appears as a complementary tool for improvement of screening methodology for LD. Reverse and forward noise spectra especially exhibit 1/f noise. Some lasers reveal g-r noise component in bias voltages corresponding to reverse I-V slope changes and around ITH . Presence of g-r noise leads to believe that point defect can be localized near the active zone.