Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell. (December 2016)
- Record Type:
- Journal Article
- Title:
- Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell. (December 2016)
- Main Title:
- Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell
- Authors:
- Huang, Tzu-Hsuan
Lo, Hao
Lo, Chieh
Wu, Meng-Chyi
Lour, Wen-Shiung - Abstract:
- Highlights: The aim of work analyzed the fabrication of each junction-type solar cells. The InGaP-subcell exhibits the largest temperature coefficient (−2.5 mV/°C) of Voc . The JSC in the triple-junction solar cell is limited by the InGaP-subcell. The Ge-subcell promotes the 39% of overall reduction in the conversion efficiency. Abstract: New manufacturing processes were proposed to evaluate important photovoltaic properties of each subcell in an InGaP/InGaAs/Ge triple-junction solar cell. In addition to the triple-junction cell, an InGaAs/Ge double-junction cell and a Ge single-junction cell were also fabricated and employed for evaluation. The key merit of the double-junction cell is that semiconductor layers of forming InGaP top subcell are retained as a dummy top subcell. Thus, the InGaAs middle subcells in both triple- and double-junction cells will receive the same light spectrum. Similarly, the Ge single-junction cell is fabricated with dummy top and middle subcells as light filters. Open-circuit voltage, short-circuit current, conversion efficiency, and current mismatched ratio were measured for evaluating and optimizing each subcell. It is found that Open-circuit voltages are 1.295, 0.967, and 0.212 V for the InGaP, InGaAs, and Ge subcells with temperature coefficients of −2.5, −1.99, and −1.87 mV/°C. Thus the Ge subcell no longer acts a real solar cell at temperature over ∼140 °C. Besides, effect of ambient temperature on short circuit currents of all as-fabricatedHighlights: The aim of work analyzed the fabrication of each junction-type solar cells. The InGaP-subcell exhibits the largest temperature coefficient (−2.5 mV/°C) of Voc . The JSC in the triple-junction solar cell is limited by the InGaP-subcell. The Ge-subcell promotes the 39% of overall reduction in the conversion efficiency. Abstract: New manufacturing processes were proposed to evaluate important photovoltaic properties of each subcell in an InGaP/InGaAs/Ge triple-junction solar cell. In addition to the triple-junction cell, an InGaAs/Ge double-junction cell and a Ge single-junction cell were also fabricated and employed for evaluation. The key merit of the double-junction cell is that semiconductor layers of forming InGaP top subcell are retained as a dummy top subcell. Thus, the InGaAs middle subcells in both triple- and double-junction cells will receive the same light spectrum. Similarly, the Ge single-junction cell is fabricated with dummy top and middle subcells as light filters. Open-circuit voltage, short-circuit current, conversion efficiency, and current mismatched ratio were measured for evaluating and optimizing each subcell. It is found that Open-circuit voltages are 1.295, 0.967, and 0.212 V for the InGaP, InGaAs, and Ge subcells with temperature coefficients of −2.5, −1.99, and −1.87 mV/°C. Thus the Ge subcell no longer acts a real solar cell at temperature over ∼140 °C. Besides, effect of ambient temperature on short circuit currents of all as-fabricated solar cells is not relevant. The current mismatched ratios are 18.6–20% at temperature ranged from 25 °C to 80 °C. A low efficiency of ∼18.7% is due partly to the poor current match. However, the processing concept proposed is useful as a method of matching currents among the subcells. … (more)
- Is Part Of:
- Solid-state electronics. Volume 126(2016)
- Journal:
- Solid-state electronics
- Issue:
- Volume 126(2016)
- Issue Display:
- Volume 126, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 126
- Issue:
- 2016
- Issue Sort Value:
- 2016-0126-2016-0000
- Page Start:
- 109
- Page End:
- 114
- Publication Date:
- 2016-12
- Subjects:
- Solar cell -- InGaP -- Ge -- Conversion efficiency
Semiconductors -- Periodicals
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00381101 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.sse.2016.09.006 ↗
- Languages:
- English
- ISSNs:
- 0038-1101
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8327.385000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 14488.xml