The effect of transparent conductive nanocrystalline oxide thin layer on performance of UV detectors fabricated on Fe-doped GaN. (January 2017)

• Record Type: Journal Article
• Authors: Xing, Z.; Wang, R.X.; Fan, Y.M.; Wang, J.F.; Zhang, B.S.; Xu, K.
• Is Part Of: Materials science in semiconductor processing. Volume 57(2016)
• Page Start: 132
• Page End: 136
• Publication Date: 2017-01
• Subjects: GaN -- GZO -- UV detector -- Thin film -- Oxide semiconductor; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.10.017
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Two kinds of metal-semiconductor-metal (MSM) Schottky UV detectors with and without an insertion layer of transparent conductive nanocrystalline oxide were fabricated on Fe-doped semi-insulating GaN epilayers. It is found that the optical responsivity of the detectors can be significantly improved by two orders of magnitude by inserting a thin layer of Ga-doped nanocrystalline ZnO (GZO) between metal electrode and Fe-doped GaN. Such improvement is suggested to be associated with the valence-band discontinuities and efficient suppression recombination of traps induced by Fe impurities in GaN due to the insertion of a thin layer of GZO.