Characteristics and electrical properties of reactively sputtered AlInGaN films from three different Al0.05InxGa0.95−xN targets with x=0.075, 0.15, and 0.25. (January 2017)

• Record Type: Journal Article
• Authors: Lin, Kaifan; Kuo, Dong-Hau
• Is Part Of: Materials science in semiconductor processing. Volume 57(2016)
• Page Start: 63
• Page End: 69
• Publication Date: 2017-01
• Subjects: AlInGaN -- Thin film -- Sputtering -- Electrical property -- High turn-on voltage; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.10.004
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: By reactive sputtering in an atmosphere mixed with Ar and N2, AlInGaN films were deposited from Al 0.05 In x Ga 0.95−x N (x= 0.075, 0.15 and 0.25) targets on Si (100) with a substrate temperature of 200 °C and a radio-frequency (RF) output power of 120 W. Hot pressing was used to create a series of cermet targets mixed with metal powders and ceramic GaN for sputtering. The AlInGaN films demonstrate a wurtzite crystalline structure with a preferential m -( 10 1 ¯ 0 ) growth plane. We investigated the effect of compositional changes on the formation of the AlInGaN film and its electrical and optical properties. Then, I-V measurements were conducted on a straightforward n -AlInGaN/p-Si heterostructure diode, with the device containing the film deposited from the Al 0.05 In 0.075 Ga 0.875 N target exhibiting the highest turn-on voltage of 9.2 V and the lowest leakage current of 6.65×10 −9 A (at −5 V). Highlights: The sputtered AlInGaN films were deposited from cermet targets. Al competes with In to determine the electrical properties of the AlInGaN films. The turn-on voltage of the n -AlInGaN/p-Si diode was found to be 9.2 eV.