Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect. (January 2017)

• Record Type: Journal Article
• Authors: d'Alessandro, Vincenzo
• Is Part Of: Solid-state electronics. Volume 127(2017)
• Page Start: 5
• Page End: 12
• Publication Date: 2017-01
• Subjects: Bipolar transistor -- Early effect -- Silicon germanium (SiGe) -- Silicon-on-glass (SOG) -- Thermal resistance; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.10.041
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Three methods to extract the thermal resistance of bipolar transistor are presented. The methods allow purifying the extraction from the influence of the Early effect. The methods rely on simple common-base measurements and can be applied to any device. The accuracy is verified through circuit simulations of SOG BJTs and SiGe:C HBTs. Abstract: This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base DC measurements. The accuracy is numerically verified by making use of a compact model calibrated on I–V characteristics of state-of-the-art SOG BJTs and SiGe:C HBTs.