Depletion effect of polycrystalline-silicon gate electrode by phosphorus deactivation. (January 2017)

• Record Type: Journal Article
• Authors: Jeon, Woojin; Ahn, Ji-Hoon
• Is Part Of: Solid-state electronics. Volume 127(2017)
• Page Start: 1
• Page End: 4
• Publication Date: 2017-01
• Subjects: Polysilicon -- Phosphorus -- Depletion effect -- Deactivation; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.10.042
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The effect of the thermal process on the polysilicon depletion effect was systematically investigated. The origin of polysilicon depletion effect is the electrical deactivation of phosphorus. The polysilicon depletion effect can be efficiently reduce by increasing the size of grain. Abstract: A study of the polycrystalline silicon depletion effect generated from the subsequent thermal process is undertaken. Although phosphorus out-diffusion, which causes the polycrystalline silicon depletion effect, is increased with an increase in the thermal process temperature, the polysilicon depletion effect is stronger when inducing rapid thermal annealing in lower temperatures of 600–800 °C than in 900 °C. This indicates that the major reason for the polysilicon depletion effect is not the out-diffusion of phosphorus but the electrical deactivation of phosphorus, which is segregated at the grain boundary. Therefore, by increasing the size of polycrystalline silicon grain, we can efficiently reduce the polysilicon depletion effect and enhance the tolerance to deactivation.