Device characteristics and thermal analysis of GaN-based vertical light-emitting diodes with different types of packages. (January 2017)

• Record Type: Journal Article
• Authors: Guan, Xiang-Yu; Lee, Hee Kwan; Lee, Soo Hyun; Yu, Jae Su
• Is Part Of: Solid-state electronics. Volume 127(2017)
• Page Start: 51
• Page End: 56
• Publication Date: 2017-01
• Subjects: Light-emitting diodes -- Packages -- Junction temperature -- Thermal transient tester -- Finite element method; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.10.038
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The experimental and theoretical analysis of VLEDs with two different types of packages was reported. The thermal properties of packaged devices were measured by a thermal transient tester. The device performance was closely related to the heat dissipation determined by package designs and material selections. The MLF packaged device indicated lower Rth value in comparison with the MPLF packaged device. Abstract: We investigated the device characteristics of GaN-based blue vertical light-emitting diodes (VLEDs) with two different package structures ( i.e., lead frame with metal/plastic body (MPLF package) and lead frame with metal body (MLF package)) under various measurement conditions. In comparison with the MPLF packaged VLEDs, the MLF packaged VLEDs exhibited relatively lower junction temperature and thermal resistance values due to the better heat dissipation capability, leading to further improved optical, spectral, and thermal device characteristics. Thermal simulations of the VLEDs with two different packages were performed using three-dimensional steady-state device models to theoretically calculate their thermal and mechanical behaviours. The maximum temperatures, internal temperature distributions, and thermomechanical stresses were analysed by a finite element method.