Cite
HARVARD Citation
Chai, J. et al. (2020). Memory Devices: MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness (Adv. Mater. 42/2020). Advanced materials. 32 (42), p. n/a. [Online].
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Chai, J. et al. (2020). Memory Devices: MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness (Adv. Mater. 42/2020). Advanced materials. 32 (42), p. n/a. [Online].