Memory Devices: MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness (Adv. Mater. 42/2020). Issue 42 (20th October 2020)

• Record Type: Journal Article
• Authors: Chai, Jianwei; Tong, Shiwun; Li, Changjian; Manzano, Carlos; Li, Bing; Liu, Yanpeng; Lin, Ming; Wong, Laimun; Cheng, Jianwei; Wu, Jing; Lau, Aaron; Xie, Qidong; Pennycook, Stephen J.; Medina, Henry; Yang, Ming; Wang, Shijie; Chi, Dongzhi
• Is Part Of: Advanced materials. Volume 32:Issue 42(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-10-20
• Subjects: 2D materials -- random number generation -- resistive random‐access memory -- van der Waals heterostructures; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202070317
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : In article number 2002704, Henry Medina, Ming Yang, Shijie Wang, Dongzhi Chi, and co‐workers report a ReRAM cell with outstanding cumulative probabilities using a MoS2 /polymer heterostructure. Moreover, the high resistance state is determined to be an excellent source of multistate randomness. Thus, a process for the production of high‐performance ReRAM devices is presented, which sheds light on their application as random number generation.