Defect levels in d-electron containing systems: Comparative study of CdTe using LDA and LDA + U. (October 2020)

• Record Type: Journal Article
• Authors: Yin, Yuan; Wang, Yu; Chen, Guangde; Wu, Yelong
• Is Part Of: Journal of semiconductors. Volume 41:Number 10(2020)
• Publication Date: 2020-10
• Subjects: defects -- LDA -- LDA + U -- formation energy -- transition energy -- first-principles; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/41/10/102701
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: The defect properties in d -electron containing materials will be strongly influenced by the non-negligible on-site Coulomb interactions. However, this has been omitted in the current widely adopted standard first-principles calculations, such as LDA, leading to a large deviation of calculated results. Therefore, as a comparative case study, in this paper the defects of CdTe are investigated by first-principles calculations including standard LDA and LDA + U, and we find that LDA + U gives more accurate formation energies of the neutral point defects than the standard LDA. The same trend can be found in transition energies of the charged state defects as well. These comparative analyses show that LDA + U gives better results for the defects of CdTe than the standard LDA and requires less computing resource than LAPW, indicating it should have huge potential to model supercells with large number of atoms and strong electron interactions. Moreover, a new anion interstitial defect structure is found to be more stable than the well-known tetrahedron central anion interstitial defect structure .