Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes. (29th September 2020)

• Record Type: Journal Article
• Authors: Tian, M F; Feng, X J; Long, H; Ying, L Y; Zhang, B P; Wang, K; Yu, T J
• Is Part Of: Semiconductor science and technology. Volume 35:Number 11(2020)
• Publication Date: 2020-09-29
• Subjects: Carbon nanotube patterned sapphire -- gallium nitride -- ABC model; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/abb183
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Patterned sapphire substrate has been used extensively in the growth of gallium nitride (GaN) material and related light emitting devices (LEDs). Recently, carbon nanotube patterned sapphire (CNTPS) was utilized to improve the GaN material and LED devices. In this article, intrinsic analyzation of LEDs on CNTPS were studied. LEDs grown on three layers of CNTs showed highest radiative quantum efficiency and internal quantum efficiency, while LEDs on double layers of CNTs exhibited the best light output power and external quantum efficiency. The physics of carriers' injection, radiative, non-radiative, Auger recombination and light extraction in CNT patterned LEDs were unraveled by the 'ABC' modelsimulation.