Effect of annealing ambient gases on the bias stability of amorphous SnSiO thin-film transistors. (22nd September 2020)

• Record Type: Journal Article
• Authors: Yang, Jianwen; Cao, Duo; Lin, Dong; Liu, Feng
• Is Part Of: Semiconductor science and technology. Volume 35:Number 11(2020)
• Publication Date: 2020-09-22
• Subjects: tin oxide -- stability -- annealing, thin-film-transistor (TFT); Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/abac93
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The effect of different annealing ambient gases on the initial electrical properties and bias stability of amorphous tin silicon oxide ( a- SnSiO) thin-film transistors (TFTs) is examined in this study. At an annealing temperature of 350 °C, the SnSiO film remained amorphous with excellent transmittance regardless of the annealing environment. The presence of oxygen during annealing (such as in air and O2 ) could reduce the mobility of the TFTs and create more oxygen-related defect states, thereby reducing the bias stability. In contrast, nitrogen-annealed TFTs showed maximum mobility and optimal bias stability. The corresponding mobility reached 8.6 cm 2 V −1 s −1, the threshold voltage was 0.2 V and the subthreshold swing value was 0.7 V dec −1 .