P‐6.9: High‐reliability a‐Si:H TFT with Repressing Photo‐degradation on G8.6 LCDs. (4th October 2019)

• Record Type: Journal Article
• Authors: Chao, Wei; An-Thung, Cho; Hejing, Zhang; Qionghua, Mo; Zhen, Liu; Fengyun, Yang; Kaijun, Liu; James, Hsu
• Is Part Of: Digest of technical papers. Volume 50(2019)Supplement 1
• Page Start: 779
• Page End: 780
• Publication Date: 2019-10-04
• Subjects: Photo-degradation -- stability -- the gate insulting layer -- Von Margin; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13645
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Hydrogenated amorphous silicon (a‐si:H) is still applied to the mass production in large size liquid crystal display (LCD) as the major active layer material. In this paper, we successfully fabricated high‐optical‐quality a‐si:H thin film transistor (TFT) on G8.6 LCDs. Photo‐stability of a‐si:H TFT with 4‐mask process was enhanced by restructuring the gate insulating layer (GI) structure. With using this advanced manufacturing method, the photo‐degradation of devices was repressed and the optical performance was improved.