Effect of post-annealing on the properties of Co-doped ZnO thin films deposited by channel-spark ablation. (September 2018)

• Record Type: Journal Article
• Authors: Ali, Asghar; Henda, Redhouane
• Is Part Of: Materials science in semiconductor processing. Volume 84(2018)
• Page Start: 24
• Page End: 35
• Publication Date: 2018-09
• Subjects: Cobalt-doped zinc oxide thin films -- Post-annealing treatment -- Pulsed electron beam ablation -- Morphology -- Structure; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.04.041
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this study, we report on the effect of post-annealing treatment on the structure and morphology of Co-doped ZnO (CZO) thin film nano-composites deposited on Si (100) by channel-spark pulsed electron beam ablation (PEBA) from a single target, Cox Zn1-x O (x = 0.20). The as-grown CZO films have been deposited within the temperature range 350 °C–450 °C, at electron beam acceleration voltages of 15 kV and 16 kV, and a beam frequency of 4 Hz. The films have been subjected to thermal annealing at either 400 °C or 600 °C for one hour. The effect of post-growth annealing on film properties has been discussed in terms of surface morphology, chemical composition, chemical state, and crystal structure. Experimental results show that, overall, post-annealing treatment significantly affects the structural and morphological properties of the films. Films annealed at 400 °C have higher average particle size and degree of crystallinity of ZnO hexagonal wurtzite structure relatively to the films annealed at 600 °C. Films annealed at 400 °C exhibit larger content in hexagonal close-packed (hcp) metallic Co (Co°) compared to the films annealed at 600 °C and to as-grown films. Both x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) indicate that enhanced growth of Co о is achieved at the annealing temperature of 400° C.