Electronic structures and optical properties of Cu1-xAgxInTe2 (x = 0, 0.25, 0.5, 0.75 and 1) chalcopyrite compounds. (September 2018)

• Record Type: Journal Article
• Authors: Zhong, Yuhan; Wang, Peida; Mei, Huayue; Jia, Zhenyuan; Cheng, Nanpu
• Is Part Of: Materials science in semiconductor processing. Volume 84(2018)
• Page Start: 42
• Page End: 49
• Publication Date: 2018-09
• Subjects: Cu1-xAgxInTe2 compounds -- Electronic structure -- Optical property -- First principles; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.04.038
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: ABC2 chalcopyrite compounds are receiving increasing attention recently, and there are many researches of B-site or C-site doping. The current work mainly redresses the effects of A-site doping. The electronic structures and optical properties of Cu1- x Ag x InTe2 ( x = 0, 0.25, 0.5, 0.75 and 1) compounds have been investigated by the first-principles approach based on density functional theory (DFT). Cu1- x Ag x InTe2 compounds are direct band-gap semiconductors, and the calculated band gaps are respectively 1.128, 1.086, 1.053, 1.029 and 1.01 eV, which coincide well with the experimental results. The Cu1- x Ag x InTe2 monocrystals with optical anisotropies have the potential applications in the fields of second harmonic generation and optical parametric oscillator. The polycrystalline Cu1- x Ag x InTe2 compounds have high absorption and reflection coefficients. Doping Ag atoms can further increase the photoconductivities of Cu1- x Ag x InTe2 compounds. Besides, CuInTe2, Cu0.25 Ag0.75 InTe2 and AgInTe2 compounds have high absorption capacities and photoconductivities in the visible light region, promising them great potentials to be photoelectric materials.