A novel structure ZnO-Fe-ZnO thin film memristor. (1st November 2018)

• Record Type: Journal Article
• Authors: Santos, Y.P.; Valença, E.; Machado, R.; Macêdo, M.A.
• Is Part Of: Materials science in semiconductor processing. Volume 86(2018)
• Page Start: 43
• Page End: 48
• Publication Date: 2018-11-01
• Subjects: Memristor -- Thin film -- Nanoelectronics -- Multilayer -- ZnO -- ZnO-Fe-ZnO; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.06.016
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The memristor behavior of thin films having a multilayer Pt/ZnO/Fe/ZnO/ITO structure, deposited using RF/DC magnetron sputtering, was studied. The iron layer between the ZnO layers facilitates the change in the resistance of the device through the oxidation of the iron at the ZnO/Fe interface, thus generating oxygen vacancies and providing electrons from the redox reaction between γ-Fe2 O3 and Fe3 O4 . The main mechanisms of conduction include Poole–Frenkel emission and Fowler–Nordhein tunneling with the ion migration, oxygen vacancies, and redox reactions of iron oxides (γ-Fe2 O3 and Fe3 O4 ). The response of the device to sequential voltage pulses in terms of variation in resistance, RERASE /RWRITE ratio, retention time, and control of the resistance state, through control of the applied voltage, was also evaluated.