Cite
HARVARD Citation
Leon, A. et al. (2020). Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy. Journal of physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Leon, A. et al. (2020). Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy. Journal of physics. p. . [Online].