Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy. (8th July 2020)

• Record Type: Journal Article
• Authors: Leon, Alejandro O; Bauer, Gerrit E W
• Is Part Of: Journal of physics. Volume 32:Number 40(2020)
• Publication Date: 2020-07-08
• Subjects: voltage -- rare-earth anisotropy -- voltage-controlled magnetic anisotropy; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/ab997c
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: The control of magnetic materials and devices by voltages without electric currents holds the promise of power-saving nano-scale devices. Here we study the temperature-dependent voltage control of the magnetic anisotropy caused by rare-earth (RE) local moments at an interface between a magnetic metal and a non-magnetic insulator, such as Co|(RE)|MgO. Based on a Stevens operator representation of crystal and applied field effects, we find large dominantly quadrupolar intrinsic and field-induced interface anisotropies at room temperature. We suggest improved functionalities of transition metal tunnel junctions by dusting their interfaces with rare earths.