Cite
HARVARD Citation
Shao, J. et al. (2020). Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs. Journal of physics. p. . [Online].
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Shao, J. et al. (2020). Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs. Journal of physics. p. . [Online].