Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates. (19th May 2020)

• Record Type: Journal Article
• Authors: Lee, Hosang; Cho, Kyoungah; Kim, Donghyun; Kim, Sangsig
• Is Part Of: Semiconductor science and technology. Volume 35:Number 6(2020)
• Publication Date: 2020-05-19
• Subjects: amorphous indium tin gallium zinc oxide -- colorless polyimide -- bendable oxide thin-film transistors -- bending radius -- compressive stress -- tensile stress; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab8439
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this study, we fabricate amorphous indium tin gallium zinc oxide (a-ITGZO) thin-film transistors (TFTs) on colorless polyimide (CPI) substrates and examine their electrical characteristics as functions of the bending radius. A representative a-ITGZO TFT shows typical n -type behavior and operates with a mobility of 34.32 cm 2 V −1 s −1, threshold voltage of −0.71 V, subthreshold swing of 169 mV, and on/off ratio of 2 × 10 7 . The a-ITGZO TFT operates stably even under a bending radius of 2 mm, regardless of the upward or downward bending. The thickness of the thin CPI substrate contributes to the stable operation of the bent TFT.