Generating robust two-dimensional hole gas at the interface between boron nitride and diamond. (4th September 2020)

• Record Type: Journal Article
• Authors: Wu, Kongping; Gan, Liyong; Zhang, Leng; Zhang, Pengzhan; Liu, Fei; Fan, Jing; Sang, Liwen; Liao, Meiyong
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 9(2020)
• Publication Date: 2020-09-04
• Subjects: Diamond -- Two-dimensional hole gas -- Band alignment -- Surface transfer doping -- First principle calculations; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abb20c
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We report on the generation of two-dimensional hole gas (2DHG) with robust stability at the interface of c-BN/diamond upon proper interface engineering without the requirement of hydrogen on diamond. The areal density of the 2DHG is as high as 9.85 × 10 12 cm −2, and the hole mobility is as high as 924 cm 2 V −1 s −1 . The intrinsic electron-deficiency nature of the interfacial carbon–boron bonds and the directional charge transfer due to the type-II band alignment are indispensable factors that synergistically lead to the formation of 2DHG.