Generating robust two-dimensional hole gas at the interface between boron nitride and diamond. (4th September 2020) - Wu, Kongping
Abstract: We report on the generation of two-dimensional hole gas (2DHG) with robust stability at the interface of c-BN/diamond upon proper interface engineering without the requirement of hydrogen on diamond. The areal density of the 2DHG is as high as 9.85 × 10 12 cm −2, and the hole mobility is as high as 924 cm 2 V −1 s −1 . The intrinsic electron-deficiency nature of the interfacial carbon–boron bonds and the directional charge transfer due to the type-II band alignment are indispensable factors that synergistically lead to the formation of 2DHG.