The impact of radiation and temperature effects on dual-direction SCR devices for on-chip ESD protections. (12th March 2020)

• Record Type: Journal Article
• Authors: Wu, Ming; Lu, Wenzhao; Zhang, Chenchen; Peng, Wei; Zeng, Yun; Jin, Hu; Xu, Jun; Chen, Zhuojun
• Is Part Of: Semiconductor science and technology. Volume 35:Number 4(2020)
• Publication Date: 2020-03-12
• Subjects: electrostatic discharge -- temperature stability -- total-ionizing dose -- silicon controlled rectifier; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab74ed
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The reliability issues of integrated circuits are attracting more attention, especially in extreme environments like radiation and elevated temperature conditions. The impact of ionizing radiation and temperature effects on the electrostatic discharge (ESD) protection devices should not be negligible. In this paper, A low-voltage dual-direction silicon controlled rectifier (DDSCR) and a high-voltage DDSCR based on laterally diffused metal oxide semiconductor are chosen and fabricated in a 5 V/18 V Bipolar-CMOS-DMOS process. To study the combined effects of ESD and total-ionizing dose, transmission line pulse (TLP) measurements are conducted right after exposure to 60 Co gamma-ray up to 200 krad(Si). Besides, the TLP tests are performed at different temperatures ranging from 300 to 400 K to show the impact of elevated temperature on ESD devices. In the meanwhile, the physical mechanisms of the synergistic effects are investigated by means of three-dimensional (3D) TCAD simulations.